Anisotropic Van Der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing

In-plane optical anisotropy plays a critical role in manipulating light wide range of planner photonic devices. In this study, the strong multilayer 2D GeAs is leveraged and utilized to validate technical feasibility on-chip management. A stamped into an ultra-compact silicon waveguide four-way crossing optimized for operation O-optical band. The measured transmission spectra indicated remarkable discrepancy between in-plane crystal axes with attenuation ratio ∼3.5 (at 1330 nm). Additionally, effect orientation on electro-optic performance demonstrated straight waveguide. notable 50% reduction responsivity was recorded devices constructed cross direction compared a -direction parallel polarization. This extraordinary anisotropy, combined high refractive index ∼4 GeAs, opens possibilities efficient manipulation